The Government of Odisha, through its Electronics & Information Technology Department and nodal agency OCAC, has approved financial support for Phase 1 of RIR Power Electronics’s Silicon Carbide (SiC) semiconductor manufacturing facility in Bhubaneswar.

The state Cabinet and State-Level Single Window Clearance Committee (SLSWCC) had earlier cleared the two-phase project with a total estimated cost of around Rs 618 crore. As per the fiscal support agreement, capital subsidy will be disbursed on a pro-rata basis.

To date, RIR has incurred Rs 65 crore in capital expenditure and is eligible for government subsidy of Rs 32 crore. The upcoming plant aims to produce high-power SiC MOSFETs, IGBTs, and diodes in the 3.3 kV–20 kV range, with applications in electric vehicles, renewable energy systems, power grids, power electronics, and industrial automation.